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POSTDOCTORAL POSITION “Large diamond wafers for advanced devices”

Employeur : Groupe d’Etude de la Matière Condensée (UMR8635 - GEMaC)

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Job Description:

Fixed term contract: 20 months

Position available: immediately

Contacts: [email protected] and [email protected]

Diamond is a semiconductor with superlative properties. Diamond electronic devices operating in extreme
conditions (high-temperature, high power, high-radiation, corrosive environments …) are developed as prototypes
in many research labs around the world. The thermal and optical properties of diamond are also expected to boost
the performance of power lasers and optical fibers, for instance. However such high technology products based on
diamond are still hindered industrially by the small size of available diamond wafers (a few millimeters only for
single crystals) and weak electron conductivities due to the difficulty of its n-type doping.

The GEMaC laboratory (www.gemac.uvsq.fr) leads state-of-the-art research into the physical properties and
crystal growth of diamond. It is recognized internationally due to over 15 years of scientific research mainly
focused on understanding the effects of defects/impurities on optical/electrical/crystalline properties of diamond.

The “Diamond for electronics” team at GEMaC is also a unique French group controlling the fabrication of n-type
homoepitaxial diamond films. The postdoc will be involved in two French projects, DIAMAX and DIAMWAFEL,
aiming at increasing the size of diamond wafers and at realizing prototype devices.

For the fabrication of polycrystalline diamond, GEMaC is associated in the DIAMAX project with a French
company, Plassys Bestek. Its new CVD growth reactor is designed to extend the size of the polycrystalline
diamond wafers from 2 inches to 6 inches diameter. The diamond properties (purity, thickness homogeneity, grain
size …) will be analyzed at GEMaC.

The synthesis of single-crystal diamond with large sizes is a great challenge. An approach with promising upscaling
possibilities is the heteroepitaxial growth of diamond on iridium surfaces. On this topic, GEMaC is partner
of the DIAMWAFEL project involving 4 other French academic labs (CEA/LIST, LSPM, INL and Neel Institute).
The substrates for the hetero-epitaxial growth of diamond typically consist in Ir(100nm)/SrTiO3(40nm)/silicon
wafers fabricated in the consortium1. The ultimate goal is to fabricate a prototype diamond electronic device using
doped diamond layers on 1 inch single crystal wafers. The n-type layers will be fabricated at GEMaC which is one
of the few labs in the world that masters the n-type conductivity of phosphorus-doped diamond.

The post-doctoral researcher will be in charge of the characterization of the undoped and doped diamond materials
grown in these projects. He/she will study, in close collaboration with the project partners, on such issues as the
physical properties of diamond crystals from the early stages (nanometer scale) to self-standing diamond wafers (a
few 100 μm thick). Hetero-epitaxial materials usually present a residual mosaicity, which is related to residual
strain and extended structural defects (dislocation networks), as shown in recent publications 2 , 3 . For doped
diamond, the postdoctorant will rely on the experimental platform available at GEMaC for the characterization of
dopant activity. The postdoc will have the opportunity to use a large array of advanced experimental methods:
cathodoluminescence, XRD, micro-Raman, AFM and SEM. Among these, cathodoluminescence at T=5K with
high spatial and spectral resolution will be a key technique to perform physical analysis based on hyperspectral imaging. He/she will also have access to one of the latest generations of SIMS equipment and FTIR absorption at 8K.

Profil / Qualifications Requises

The applicant must have a strong background in solid state physics and be used to team work and research projects.
Experience on spectroscopy of semiconductors, X-ray diffraction and epitaxy techniques will be highly advantageous.


Groupe d’Etude de la Matière Condensée (UMR8635 - GEMaC) 45, av des Etats-Unis – 78035 Versailles – France Contacts: [email protected] and [email protected]

[email protected]

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